Forksheet CMOS SCM Generator

Parameters

Import SDE / SCM

Open an .scm file or paste Sentaurus SDE commands. The input is recognised by its content, not its file name, so a pasted fragment and a saved file are handled the same way.

Paste SDE commands

Nothing imported.

Study parameters

The six primary geometry variables of the self-heating study. All lengths are in micrometres (1 nm = 0.001 µm). Every other coordinate in the structure is recomputed from these and from the design constants below.

1 · T_NS — nanosheet thickness

µm

Vertical (Y) extent of each sheet. Sets the sheet pitch, the gate bands and the device height — the dominant term in the thermal path out of the channel.

2 · W_NS — nanosheet width

µm

Transverse (Z) extent of each sheet. Drives the HfO₂ collars, the gate bridges and the pMOS offset.

3 · L_G — gate length

µm

Gated length in X. Sets the channel segment, the gate metal and both junction planes.

4 · T_SPACER — spacer thickness

µm

Si₃N₄ between gate and pad, each side. Also the source-to-gate and drain-to-gate distance, and a poor thermal conductor in the escape path.

5 · L_PAD — source/drain length

µm

Length of each source and drain pad in X. The pad height and width are not independent: they follow the sheet stack and the gate envelope.

6 · N_NS — number of nanosheets

sheets

Sheets per transistor. Every dependent band, spacer piece, collar and doping placement is rebuilt from this. The structured V8 formats are written for 3; other counts emit step-by-step.

Advanced — fixed design constants

These are the constants at the top of the Python generator. They are not part of the study, but they are editable there, so they are editable here too. Changing one recomputes the whole structure.

T_FORK — fork wall thickness

µm

T_HFO2 — HfO₂ collar

µm

T_METAL — gate metal in each gap

µm

T_LINER — SiO₂ gate liner

µm

T_BRIDGE — gate bridge thickness

µm

T_SUB — substrate depth

µm

T_WELL — well depth

µm

MESH_MIN_X

µm

MESH_MIN_Y

µm

MESH_MIN_Z

µm

Doping concentrations

Active concentrations in cm⁻³, written straight into the profile definitions. Each one is bound to named regions, so a change follows the geometry rather than a coordinate window.

Substrate bulk — Boron

p-well — Boron

n-well — Phosphorus

nMOS channel — Boron

nMOS extension — Arsenic

nMOS S/D — Arsenic

pMOS channel — Phosphorus

pMOS extension — Boron

pMOS S/D — Boron

Generation options

Mode

One at a time varies each parameter while holding the other two at the values above. Full grid takes every combination.

Tick the variables to sweep and give each a comma-separated list. Unticked parameters hold the value set above. A full grid is the product of every ticked list, so it grows quickly — the case count below is live.

T_NS

W_NS

L_G

T_SPACER

L_PAD

N_NS

T_FORK

No cases.

Mesh prefix

auto keeps sweep runs from overwriting each other. A fixed name such as fork1108 matches an existing sdevice.cmd Grid entry.

Custom prefix

writes <prefix>_msh.tdr

Output format

Step-by-step writes every command out one by one with no comments, the way you would type it into a script window. The structured forms keep the V8 helper procedures.

Name	-
Material	-
X min	-
X max	-
Y min	-
Y max	-
Z min	-
Z max	-
X length	-
Y length	-
Z length	-
Volume	-
Doping type	-
Concentration	-
Profile	-

Import SDE / SCM

Study parameters

Advanced — fixed design constants

Doping concentrations

Generation options

Generate

Computed geometry

Structure analysis

Live preview

Script